A Fully-Integrated 180 nm CMOS 1.2 V Low-Dropout Regulator for Low-Power Portable Applications
This paper presents the design and postlayout simulation results of a capacitor-less low dropout (LDO) regulator fully integrated in a low-cost standard 180 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology which regulates the output voltage at 1.2 V from a 3.3 to 1.3 V battery over a −40...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-08-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/17/2108 |