Mg Doping of N-Polar, In-Rich InAlN

Mg Doping of N-Polar, In-Rich InAlN

Metal organic chemical vapor deposition was used to grow N-polar In<sub>0.63</sub>Al<sub>0.37</sub>N on sapphire substrates. P-doping was provided by a precursor flow of Cp<sub>2</sub>Mg between 0 and 130 nmol/min, reaching a Cp<sub>2</sub>Mg/III ratio...

Full description

Bibliographic Details
Main Authors: Ján Kuzmík, Ondrej Pohorelec, Stanislav Hasenöhrl, Michal Blaho, Roman Stoklas, Edmund Dobročka, Alica Rosová, Michal Kučera, Filip Gucmann, Dagmar Gregušová, Marian Precner, Andrej Vincze
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Materials
Subjects:
GaN
InAlN
acceptor doping
electron mobility
Online Access:https://www.mdpi.com/1996-1944/16/6/2250

Internet

https://www.mdpi.com/1996-1944/16/6/2250

Similar Items