Transparent and High-Performance Extended Gate Ion-Sensitive Field-Effect Transistors Using Electrospun Indium Tin Oxide Nanofibers

Herein, we propose a transparent high-performance extended-gate ion-sensitive field-effect transistor (EG-ISFET) using an electrospun indium-tin-oxide (ITO) nanofiber sensing membrane with a high specific surface area. Electrospinning is a simple and effective technique for forming nanofibers. Never...

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Bibliographic Details
Main Authors: Yeong-Ung Kim, Won-Ju Cho
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Chemosensors
Subjects:
Online Access:https://www.mdpi.com/2227-9040/11/6/319