Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing
We applied excimer laser annealing (ELA) on indium-zinc oxide (IZO) and IZO/indium-gallium-zinc oxide (IGZO) heterojunction thin-film transistors (TFTs) to improve their electrical characteristics. The IZO and IZO/IGZO heterojunction thin films were prepared by the physical vapor deposition method w...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-01-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/15/2/225 |