Electrical Stability of p-Channel Feedback Field-Effect Transistors Under Bias Stresses

Electrical Stability of p-Channel Feedback Field-Effect Transistors Under Bias Stresses

In this study, we examined electrical stability of the p-channel feedback field-effect transistors (FBFETs) under negative bias stress (NBS) and positive bias stress (PBS). The intact FBFETs have a subthreshold swing (<italic>SS</italic>) of 0.12 mV/dec, an on-current of <inline-formu...

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Bibliographic Details
Main Authors: Jaemin Son, Kyoungah Cho, Sangsig Kim
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
Field-effect transistor
positive feedback loop
reliability
bias stress
recovery
Online Access:https://ieeexplore.ieee.org/document/9523874/

Internet

https://ieeexplore.ieee.org/document/9523874/

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