Depolarization mitigated in ferroelectric Hf0.5Zr0.5O2 ultrathin films (< 5 nm) on Si substrate by interface engineering

Depolarization mitigated in ferroelectric Hf0.5Zr0.5O2 ultrathin films (< 5 nm) on Si substrate by interface engineering

(Hf,Zr)O2 offers considerable potential for next-generation semiconductor devices owing to its nonvolatile spontaneous polarization at the nanoscale. However, scaling this material to sub-5 nm thickness poses several challenges, including the formation of an interfacial layer and high trap concentra...

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Bibliographic Details
Main Authors: Se Hyun Kim, Younghwan Lee, Dong Hyun Lee, Geun Hyeong Park, Hyun Woo Jeong, Kun Yang, Yong Hyeon Cho, Young Yong Kim, Min Hyuk Park
Format: Article
Language:English
Published: Tsinghua University Press 2024-03-01
Series:Journal of Advanced Ceramics
Subjects:
ferroelectric
hafnia
depolarization
charge trapping
Online Access:https://www.sciopen.com/article/10.26599/JAC.2024.9220852

Internet

https://www.sciopen.com/article/10.26599/JAC.2024.9220852

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