Analytical Modeling and TCAD Simulation of a Quanta Image Sensor Jot Device With a JFET Source-Follower for Deep Sub-Electron Read Noise

Analytical Modeling and TCAD Simulation of a Quanta Image Sensor Jot Device With a JFET Source-Follower for Deep Sub-Electron Read Noise

A novel quanta image sensor (QIS) jot device with a CMOS compatible junction-field effect transistor (JFET) source follower (SF) is introduced. The device is proposed to further reduce the read noise of QIS jots and ultimately realize a read noise of 0.15e-r.m.s. for accurate photoelectron counting....

Full description

Bibliographic Details
Main Authors: Jiaju Ma, Eric R. Fossum
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
CMOS image sensor
quanta image sensor
jot device
low noise imaging
TCAD simulation
Online Access:https://ieeexplore.ieee.org/document/7593336/

Internet

https://ieeexplore.ieee.org/document/7593336/

Similar Items