Improved Resistive and Synaptic Characteristics in Neuromorphic Systems Achieved Using the Double-Forming Process

Improved Resistive and Synaptic Characteristics in Neuromorphic Systems Achieved Using the Double-Forming Process

In this study, we investigate the electrical properties of ITO/ZrO<sub>x</sub>/TaN RRAM devices for neuromorphic computing applications. The thickness and material composition of the device are analyzed using transmission electron microscopy. Additionally, the existence of TaON interface...

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Bibliographic Details
Main Authors: Minkang Kim, Dongyeol Ju, Myounggon Kang, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2023-10-01
Series:Nanomaterials
Subjects:
resistive switching
neuromorphic system
synapse emulation
spike-timing-dependent plasticity
Online Access:https://www.mdpi.com/2079-4991/13/21/2859

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https://www.mdpi.com/2079-4991/13/21/2859

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