Improved Resistive and Synaptic Characteristics in Neuromorphic Systems Achieved Using the Double-Forming Process
In this study, we investigate the electrical properties of ITO/ZrO<sub>x</sub>/TaN RRAM devices for neuromorphic computing applications. The thickness and material composition of the device are analyzed using transmission electron microscopy. Additionally, the existence of TaON interface...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-10-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/13/21/2859 |