High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching

High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching

We investigated a high electron mobility Ge FinFET fabricated by defect-free and roughness-free atomic layer neutral beam etching (NBE) compared with one fabricated by conventional plasma etching (PE). The etching interface roughness and defect were estimated by high-resolution transmission electron...

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Bibliographic Details
Main Authors: Daisuke Ohori, Takuya Fujii, Shuichi Noda, Wataru Mizubayashi, Kazuhiko Endo, Yao-Jen Lee, Jenn-Hwan Tarng, Yiming Li, Seiji Samukawa
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Open Journal of Nanotechnology
Subjects:
Field effect transistors
gate leakage
germanium
nanofabrication
surface roughness
Online Access:https://ieeexplore.ieee.org/document/9340551/

Internet

https://ieeexplore.ieee.org/document/9340551/

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