High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching
We investigated a high electron mobility Ge FinFET fabricated by defect-free and roughness-free atomic layer neutral beam etching (NBE) compared with one fabricated by conventional plasma etching (PE). The etching interface roughness and defect were estimated by high-resolution transmission electron...
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| Format: | Article |
| Language: | English |
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IEEE
2021-01-01
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| Series: | IEEE Open Journal of Nanotechnology |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9340551/ |
| _version_ | 1818504427471896576 |
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| author | Daisuke Ohori Takuya Fujii Shuichi Noda Wataru Mizubayashi Kazuhiko Endo Yao-Jen Lee Jenn-Hwan Tarng Yiming Li Seiji Samukawa |
| author_facet | Daisuke Ohori Takuya Fujii Shuichi Noda Wataru Mizubayashi Kazuhiko Endo Yao-Jen Lee Jenn-Hwan Tarng Yiming Li Seiji Samukawa |
| author_sort | Daisuke Ohori |
| collection | DOAJ |
| description | We investigated a high electron mobility Ge FinFET fabricated by defect-free and roughness-free atomic layer neutral beam etching (NBE) compared with one fabricated by conventional plasma etching (PE). The etching interface roughness and defect were estimated by high-resolution transmission electron microscopy (TEM). In the case of using atomic layer defect-free NBE, the root-mean-square roughness of the Ge Fin sidewall surface is 1/3 times smaller than that using PE. Then, the electron mobility of Ge FinFET was improved by 1.65 times compared with that of a PE etched FinFET sample. For the subthreshold swing, the defect density of the interface between the Ge and gate dielectric film was improved by NBE. Ioff average currents of NBE and PE were around 18.1 and 57.6 nA/μm, respectively. As a result, NBE reduces the off-leakage current to 1/3 times less than PE. This corresponded to the differences in surface roughness and defect generation between NBE and PE. Therefore, we found that NBE could achieve a good performance by defect-free and atomically-flat etching the surface. |
| first_indexed | 2024-12-10T21:36:58Z |
| format | Article |
| id | doaj.art-85dd0664586d42f58c58f3a223a22441 |
| institution | Directory Open Access Journal |
| issn | 2644-1292 |
| language | English |
| last_indexed | 2024-12-10T21:36:58Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Open Journal of Nanotechnology |
| spelling | doaj.art-85dd0664586d42f58c58f3a223a224412022-12-22T01:32:36ZengIEEEIEEE Open Journal of Nanotechnology2644-12922021-01-012263010.1109/OJNANO.2021.30551509340551High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free EtchingDaisuke Ohori0https://orcid.org/0000-0001-9351-7700Takuya Fujii1Shuichi Noda2Wataru Mizubayashi3Kazuhiko Endo4https://orcid.org/0000-0002-3517-3580Yao-Jen Lee5Jenn-Hwan Tarng6Yiming Li7https://orcid.org/0000-0001-7374-0964Seiji Samukawa8https://orcid.org/0000-0003-4971-3290Joint Research Center of National Chiao Tung University and Tohoku University, National Chiao Tung University, Hsinchu, TaiwanInstitute of Fluid Science, Tohoku University, Sendai, JapanNational Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, JapanNational Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, JapanInstitute of Fluid Science, Tohoku University, Sendai, JapanTaiwan Semiconductor Research Institute, Hsinchu, TaiwanInstitute of Communications Engineering, National Chiao Tung University, Hsinchu, TaiwanJoint Research Center of National Chiao Tung University and Tohoku University, National Chiao Tung University, Hsinchu, TaiwanInstitute of Communications Engineering, National Chiao Tung University, Hsinchu, TaiwanWe investigated a high electron mobility Ge FinFET fabricated by defect-free and roughness-free atomic layer neutral beam etching (NBE) compared with one fabricated by conventional plasma etching (PE). The etching interface roughness and defect were estimated by high-resolution transmission electron microscopy (TEM). In the case of using atomic layer defect-free NBE, the root-mean-square roughness of the Ge Fin sidewall surface is 1/3 times smaller than that using PE. Then, the electron mobility of Ge FinFET was improved by 1.65 times compared with that of a PE etched FinFET sample. For the subthreshold swing, the defect density of the interface between the Ge and gate dielectric film was improved by NBE. Ioff average currents of NBE and PE were around 18.1 and 57.6 nA/μm, respectively. As a result, NBE reduces the off-leakage current to 1/3 times less than PE. This corresponded to the differences in surface roughness and defect generation between NBE and PE. Therefore, we found that NBE could achieve a good performance by defect-free and atomically-flat etching the surface.https://ieeexplore.ieee.org/document/9340551/Field effect transistorsgate leakagegermaniumnanofabricationsurface roughness |
| spellingShingle | Daisuke Ohori Takuya Fujii Shuichi Noda Wataru Mizubayashi Kazuhiko Endo Yao-Jen Lee Jenn-Hwan Tarng Yiming Li Seiji Samukawa High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching IEEE Open Journal of Nanotechnology Field effect transistors gate leakage germanium nanofabrication surface roughness |
| title | High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching |
| title_full | High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching |
| title_fullStr | High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching |
| title_full_unstemmed | High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching |
| title_short | High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching |
| title_sort | high electron mobility germanium finfet fabricated by atomic layer defect free and roughness free etching |
| topic | Field effect transistors gate leakage germanium nanofabrication surface roughness |
| url | https://ieeexplore.ieee.org/document/9340551/ |
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