Low-temperature smoothing method of scalloped DRIE trench by post-dry etching process based on SF6 plasma

Low-temperature smoothing method of scalloped DRIE trench by post-dry etching process based on SF6 plasma

Abstract Deep reactive-ion etching (DRIE) is commonly used for high aspect ratio silicon micromachining. However, scalloping, which is the result of the alternating Bosch process of DRIE, can cause many problems in the subsequent process and degrade device performance. In this work, we propose a sim...

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Bibliographic Details
Main Authors: Jin Soo Park, Dong-Hyun Kang, Seung Min Kwak, Tae Song Kim, Jung Ho Park, Tae Geun Kim, Seung-Hyub Baek, Byung Chul Lee
Format: Article
Language:English
Published: SpringerOpen 2020-08-01
Series:Micro and Nano Systems Letters
Subjects:
Deep reactive-ion etching
Reactive-ion etching
SF6 plasma
Scallop smoothing
Silicon micromachining
Online Access:http://link.springer.com/article/10.1186/s40486-020-00116-x

Internet

http://link.springer.com/article/10.1186/s40486-020-00116-x

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