Effect of oxidation temperature on physical properties of polycrystalline β-Ga2O3 grown by thermal oxidation of GaN in O2 ambient from 900 to 1400 °C
This study aimed to investigate the effect of oxidation temperature on the physical properties of β-Ga2O3 grown by thermal oxidation of GaN in the O2 ambient at high oxidation temperatures from 900 to 1400 °C. Notably, the analysis of the oxidation temperatures ranging from 1100 to 1400 °C remains u...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-05-01
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| Series: | Journal of Materials Research and Technology |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785424007440 |