Design of Static Random-Access Memory Cell for Fault Tolerant Digital System
This paper comparatively analyzes the static random-access memory (SRAM) cell designs for fault tolerance. Since SRAM cells are sensitive to radiation-induced single event upsets, various circuit-level approaches have been applied. Compared to the conventional SRAM cell circuits, one possibility is...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-11-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/12/22/11500 |