Fabrication of Porous Silicon as a Gas Sensor: The Role of Porous Silicon Surface Morphology
Manufacture of an environmental polluting gas sensor with improved properties by controlling the preparation conditions of the photo-electrochemical etching technique (PECE). The amount of porosity, the diameter of the pores, and the thickness of the prepared layer of porous silicon (Psi) can be con...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
University of Technology, Baghdad
2022-11-01
|
| Series: | Journal of Applied Sciences and Nanotechnology |
| Subjects: | |
| Online Access: | https://jasn.uotechnology.edu.iq/article_20385_0d32f8de6fbd55d6a307093b83a274b8.pdf |
| _version_ | 1811200246876733440 |
|---|---|
| author | Ahmed Abdullah Adawiya Haider Allaa Jabbaar |
| author_facet | Ahmed Abdullah Adawiya Haider Allaa Jabbaar |
| author_sort | Ahmed Abdullah |
| collection | DOAJ |
| description | Manufacture of an environmental polluting gas sensor with improved properties by controlling the preparation conditions of the photo-electrochemical etching technique (PECE). The amount of porosity, the diameter of the pores, and the thickness of the prepared layer of porous silicon (Psi) can be controlled by changing one or all of these conditions. In this paper, n-type Si with a crystalline orientation (100) was used, whereby PSi was prepared with the use of a red diode laser with a wavelength of 650 nm, using different radiation intensity, and with the constancy of etching time and current density. Through the results obtained, it was noted that: the porosity increases significantly up to 75% as well as the thickness of the PSi layer up to 1.45 µm with the increase in the intensity of the laser beam. Also, examining the morphology of the surface samples by field emission scanning electron microscope (FE-SEM) besides, the average pore diameters of the prepared samples were calculated. It is clear that the intensity of the laser beam used in the irradiation process is one of the important factors in determining the properties of the prepared PSi. PSi samples have been tested by FTIR to investigate chemical bonds on surfaces such as, (Si-Si, Si-<em>H</em>, Si-<em>H<sub>2</sub></em>, Si-O-Si, Si-O-Si, Si-H, Si-O-Si). Samples tested as gas sensors and noticed that an increase in the sensing current to 5.3 µA has appeared with the increase of porosity value where methanol gas is used as background. |
| first_indexed | 2024-04-12T02:01:25Z |
| format | Article |
| id | doaj.art-86961f9109d24988919aa3b0074c306b |
| institution | Directory Open Access Journal |
| issn | 2788-6867 |
| language | English |
| last_indexed | 2024-04-12T02:01:25Z |
| publishDate | 2022-11-01 |
| publisher | University of Technology, Baghdad |
| record_format | Article |
| series | Journal of Applied Sciences and Nanotechnology |
| spelling | doaj.art-86961f9109d24988919aa3b0074c306b2022-12-22T03:52:40ZengUniversity of Technology, BaghdadJournal of Applied Sciences and Nanotechnology2788-68672022-11-0124354210.53293/jasn.2022.4661.113420385Fabrication of Porous Silicon as a Gas Sensor: The Role of Porous Silicon Surface MorphologyAhmed Abdullah0Adawiya Haider1Allaa Jabbaar2Department of Applied Sciences, University of Technology – IraqDepartment of Applied Sciences, University of Technology – IraqDepartment of Applied Sciences, University of Technology – IraqManufacture of an environmental polluting gas sensor with improved properties by controlling the preparation conditions of the photo-electrochemical etching technique (PECE). The amount of porosity, the diameter of the pores, and the thickness of the prepared layer of porous silicon (Psi) can be controlled by changing one or all of these conditions. In this paper, n-type Si with a crystalline orientation (100) was used, whereby PSi was prepared with the use of a red diode laser with a wavelength of 650 nm, using different radiation intensity, and with the constancy of etching time and current density. Through the results obtained, it was noted that: the porosity increases significantly up to 75% as well as the thickness of the PSi layer up to 1.45 µm with the increase in the intensity of the laser beam. Also, examining the morphology of the surface samples by field emission scanning electron microscope (FE-SEM) besides, the average pore diameters of the prepared samples were calculated. It is clear that the intensity of the laser beam used in the irradiation process is one of the important factors in determining the properties of the prepared PSi. PSi samples have been tested by FTIR to investigate chemical bonds on surfaces such as, (Si-Si, Si-<em>H</em>, Si-<em>H<sub>2</sub></em>, Si-O-Si, Si-O-Si, Si-H, Si-O-Si). Samples tested as gas sensors and noticed that an increase in the sensing current to 5.3 µA has appeared with the increase of porosity value where methanol gas is used as background.https://jasn.uotechnology.edu.iq/article_20385_0d32f8de6fbd55d6a307093b83a274b8.pdflaser-assistedetchingporous siliconsurface areapollutant gases sensor |
| spellingShingle | Ahmed Abdullah Adawiya Haider Allaa Jabbaar Fabrication of Porous Silicon as a Gas Sensor: The Role of Porous Silicon Surface Morphology Journal of Applied Sciences and Nanotechnology laser-assisted etching porous silicon surface area pollutant gases sensor |
| title | Fabrication of Porous Silicon as a Gas Sensor: The Role of Porous Silicon Surface Morphology |
| title_full | Fabrication of Porous Silicon as a Gas Sensor: The Role of Porous Silicon Surface Morphology |
| title_fullStr | Fabrication of Porous Silicon as a Gas Sensor: The Role of Porous Silicon Surface Morphology |
| title_full_unstemmed | Fabrication of Porous Silicon as a Gas Sensor: The Role of Porous Silicon Surface Morphology |
| title_short | Fabrication of Porous Silicon as a Gas Sensor: The Role of Porous Silicon Surface Morphology |
| title_sort | fabrication of porous silicon as a gas sensor the role of porous silicon surface morphology |
| topic | laser-assisted etching porous silicon surface area pollutant gases sensor |
| url | https://jasn.uotechnology.edu.iq/article_20385_0d32f8de6fbd55d6a307093b83a274b8.pdf |
| work_keys_str_mv | AT ahmedabdullah fabricationofporoussiliconasagassensortheroleofporoussiliconsurfacemorphology AT adawiyahaider fabricationofporoussiliconasagassensortheroleofporoussiliconsurfacemorphology AT allaajabbaar fabricationofporoussiliconasagassensortheroleofporoussiliconsurfacemorphology |