Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs

Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs

This study investigated changes in low-frequency noise sources associated with short-channel bulk metal-oxide-semiconductor field-effect transistors (MOSFETs) by analyzing random telegraph noise (RTN) from 300 K down to 3 K. The power spectral density (PSD) of the drain current, which exhibited RTN...

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Bibliographic Details
Main Authors: Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Access
Subjects:
Quantum computer
cryogenic temperature
Si spin qubit
short-channel MOSFET
random telegraph noise
band-tail state
Online Access:https://ieeexplore.ieee.org/document/10403918/

Internet

https://ieeexplore.ieee.org/document/10403918/

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