On the Nature of the Memory Mechanism of Gated-Thyristor Dynamic-RAM Cells
With the help of numerical simulations, we revisit the operation of dynamic thin-capacitively-coupled-thyristor RAM (TRAM) and field effect diode-RAM cells and clarify the memory mechanism. The resulting carrier profiles demonstrate that the recently advanced interpretation of the physical memory (i...
| Egile Nagusiak: | , , |
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| Formatua: | Artikulua |
| Hizkuntza: | English |
| Argitaratua: |
IEEE
2015-01-01
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| Saila: | IEEE Journal of the Electron Devices Society |
| Gaiak: | |
| Sarrera elektronikoa: | https://ieeexplore.ieee.org/document/7273751/ |