A Compact Short-Channel Analytical Drain Current Model of Asymmetric Dual-Gate TMD FET in Subthreshold Region Including Fringing Field Effects

A Compact Short-Channel Analytical Drain Current Model of Asymmetric Dual-Gate TMD FET in Subthreshold Region Including Fringing Field Effects

A compact drain current model is developed for an asymmetric, dual gate, monolayer 2 - D Transition metal dichalcogenide (TMD) field effect transistor (FET) in the subthreshold region. The work includes the effect of source to drain tunneling and gate dielectric fringing effects. The model is system...

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Detaylı Bibliyografya
Asıl Yazarlar: Niraj Kumar Singh, Monika Kumari, Manodipan Sahoo
Materyal Türü: Makale
Dil:English
Baskı/Yayın Bilgisi: IEEE 2020-01-01
Seri Bilgileri:IEEE Access
Konular:
2-<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">D</italic>
TMD
FET
fringing effect
NEGF
drift-diffusion
Online Erişim:https://ieeexplore.ieee.org/document/9261494/

Internet

https://ieeexplore.ieee.org/document/9261494/

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