Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process

We studied the effects of cooling process on the generation of dislocations in multicrystalline silicon grown by the vertical Bridgman process. From the temperature field obtained by a global model, the stress relaxation and multiplication of dislocations were calculated using the Haasen-Alexander-S...

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Bibliographic Details
Main Authors: Makoto Inoue, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Bing Gao, Yoshihiro Kangawa, Koichi Kakimoto
Format: Article
Language:English
Published: Hindawi Limited 2013-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2013/706923