Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

An InGaN laser diode with InGaN–GaN–InGaN delta barriers was designed and investigated numerically. The laser power–current–voltage performance curves, carrier concentrations, current distributions, energy band structures, and non-radiative and stimulated recombination rates in the quantum wells wer...

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Bibliographic Details
Main Authors: Liwen Cheng, Zhenwei Li, Jiayi Zhang, Xingyu Lin, Da Yang, Haitao Chen, Shudong Wu, Shun Yao
Format: Article
Language:English
Published: MDPI AG 2021-08-01
Series:Nanomaterials
Subjects:
InGaN–GaN–InGaN delta barriers
InGaN
laser diodes
electron leakage
hole injection
Online Access:https://www.mdpi.com/2079-4991/11/8/2070

Internet

https://www.mdpi.com/2079-4991/11/8/2070

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