Estudio de capas de desacoplo de InGaAs/GaAs(001) por crecimiento combinado de MBE-ALMBE en forma dinámica y escalonada
Transmission Electron Microscopy study of low temperature (200º C) grown InGaAs/GaAs(001) layers showed an unexpected Lomer dislocation network in the middle of the layer, which appears as a promising one for the effective structure relaxation without a high density of threading dislocations. Howeve...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2004-04-01
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| Series: | Boletín de la Sociedad Española de Cerámica y Vidrio |
| Subjects: | |
| Online Access: | http://ceramicayvidrio.revistas.csic.es/index.php/ceramicayvidrio/article/view/543/563 |