Interfacial Resistive Switching of Niobium–Titanium Anodic Memristors with Self-Rectifying Capabilities

Interfacial Resistive Switching of Niobium–Titanium Anodic Memristors with Self-Rectifying Capabilities

A broad compositional range of Nb-Ti anodic memristors with volatile and self-rectifying behaviour was studied using a combinatorial screening approach. A Nb-Ti thin-film combinatorial library was co-deposited by sputtering, serving as the bottom electrode for the memristive devices. The library, wi...

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Bibliographic Details
Main Authors: Dominik Knapic, Alexey Minenkov, Elena Atanasova, Ivana Zrinski, Achim Walter Hassel, Andrei Ionut Mardare
Format: Article
Language:English
Published: MDPI AG 2024-02-01
Series:Nanomaterials
Subjects:
anodic memristor
Nb-Ti compositional library
interfacial
neuromorphic computing
self–rectifying
Online Access:https://www.mdpi.com/2079-4991/14/4/381

Internet

https://www.mdpi.com/2079-4991/14/4/381

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