Role of Ambient Hydrogen in HiPIMS-ITO Film during Annealing Process in a Large Temperature Range
Indium tin oxide (ITO) thin films were prepared by high power impulse magnetron sputtering (HiPIMS) and annealed in hydrogen-containing forming gas to reduce the film resistivity. The film resistivity reduces by nearly an order of magnitude from 5.6 × 10<sup>−3</sup> Ω·cm for the as-depo...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-06-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/12/12/1995 |