Room-temperature crystallization of amorphous silicon by near-UV femtosecond pulses
Near ultraviolet (λ ≈ 400 nm) femtosecond laser annealing (400 nm-FLA) in a scanning mode was employed to crystallize amorphous silicon (a-Si) films at room temperature. The average grain size of polycrystalline silicon annealed was studied as a function of the incident laser fluence and beam overla...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0001308 |