A Minimum Leakage Quasi-Static RAM Bitcell

A Minimum Leakage Quasi-Static RAM Bitcell

As SRAMs continue to grow and comprise larger percentages of the area and power consumption in advanced systems, the need to minimize static currents becomes essential. This brief presents a novel 9T Quasi-Static RAM Bitcell that provides aggressive leakage reduction and high write margins. The quas...

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Bibliographic Details
Main Authors: Adam Teman, Lidor Pergament, Omer Cohen, Alexander Fish
Format: Article
Language:English
Published: MDPI AG 2011-05-01
Series:Journal of Low Power Electronics and Applications
Subjects:
CMOS memory integrated circuits
SRAM
leakage suppression
ultra low power
dynamic noise margin
Online Access:http://www.mdpi.com/2079-9268/1/1/204/

Internet

http://www.mdpi.com/2079-9268/1/1/204/

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