A Minimum Leakage Quasi-Static RAM Bitcell
As SRAMs continue to grow and comprise larger percentages of the area and power consumption in advanced systems, the need to minimize static currents becomes essential. This brief presents a novel 9T Quasi-Static RAM Bitcell that provides aggressive leakage reduction and high write margins. The quas...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2011-05-01
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| Series: | Journal of Low Power Electronics and Applications |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2079-9268/1/1/204/ |