Analysis of the growth mechanisms of CO/Si(100)-(2×1)interface by UPS(CO在Si(100)表面生长的光电子谱研究)

本文着重介绍了CO/Si(100)界面CO原子与表面Si原子的相互作用.在不同覆盖度或经不同退火温度处理，CO，Si原子之间存在不同的相互作用.当覆盖度为10ML时经350℃退火处理后，Si(100)表面将形成COSi2处延.

Bibliographic Details
Main Authors:	BAODe-song(鲍德松), SHENHai-juan(沈海娟), ZHANGXun-sheng(张训生)
Format:	Article
Language:	zho
Published:	Zhejiang University Press 2000-11-01
Series:	Zhejiang Daxue xuebao. Lixue ban
Subjects:	扩散处延光电子谱
Online Access:	https://doi.org/zjup/1008-9497.2000.27.6.605-607

Internet