Nanoribbon‐Based Flexible High‐Performance Transistors Fabricated at Room Temperature

Nanoribbon‐Based Flexible High‐Performance Transistors Fabricated at Room Temperature

Abstract Si‐nanoribbon‐based high‐performance field‐effect transistors (FETs) with room temperature (RT)‐deposited dielectric are presented. The distinct feature of these devices is that the high‐quality SiNx dielectric deposition at RT, directly on the transfer‐printed nanoribbons, is compatible wi...

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Bibliographic Details
Main Authors: Ayoub Zumeit, William Taube Navaraj, Dhayalan Shakthivel, Ravinder Dahiya
Format: Article
Language:English
Published: Wiley-VCH 2020-04-01
Series:Advanced Electronic Materials
Subjects:
flexible electronics
flexible FETs
field‐effect transistors
transfer printing
Online Access:https://doi.org/10.1002/aelm.201901023

Internet

https://doi.org/10.1002/aelm.201901023

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