Interface Contact Thermal Resistance of Die Attach in High-Power Laser Diode Packages
The reliability of packaged laser diodes is heavily dependent on the quality of the die attach. Even a small void or delamination may result in a sudden increase in junction temperature, eventually leading to failure of the operation. The contact thermal resistance at the interface between the die a...
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-01-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/13/1/203 |
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| author | Liting Deng Te Li Zhenfu Wang Pu Zhang Shunhua Wu Jiachen Liu Junyue Zhang Lang Chen Jiachen Zhang Weizhou Huang Rui Zhang |
| author_facet | Liting Deng Te Li Zhenfu Wang Pu Zhang Shunhua Wu Jiachen Liu Junyue Zhang Lang Chen Jiachen Zhang Weizhou Huang Rui Zhang |
| author_sort | Liting Deng |
| collection | DOAJ |
| description | The reliability of packaged laser diodes is heavily dependent on the quality of the die attach. Even a small void or delamination may result in a sudden increase in junction temperature, eventually leading to failure of the operation. The contact thermal resistance at the interface between the die attach and the heat sink plays a critical role in thermal management of high-power laser diode packages. This paper focuses on the investigation of interface contact thermal resistance of the die attach using thermal transient analysis. The structure function of the heat flow path in the T3ster thermal resistance testing experiment is utilized. By analyzing the structure function of the transient thermal characteristics, it was determined that interface thermal resistance between the chip and solder was 0.38 K/W, while the resistance between solder and heat sink was 0.36 K/W. The simulation and measurement results showed excellent agreement, indicating that it is possible to accurately predict the interface contact area of the die attach in the F-mount packaged single emitter laser diode. Additionally, the proportion of interface contact thermal resistance in the total package thermal resistance can be used to evaluate the quality of the die attach. |
| first_indexed | 2024-03-08T15:08:32Z |
| format | Article |
| id | doaj.art-87c405785d5e4f0d8beff57cccf4f9ea |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-08T15:08:32Z |
| publishDate | 2024-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-87c405785d5e4f0d8beff57cccf4f9ea2024-01-10T14:55:10ZengMDPI AGElectronics2079-92922024-01-0113120310.3390/electronics13010203Interface Contact Thermal Resistance of Die Attach in High-Power Laser Diode PackagesLiting Deng0Te Li1Zhenfu Wang2Pu Zhang3Shunhua Wu4Jiachen Liu5Junyue Zhang6Lang Chen7Jiachen Zhang8Weizhou Huang9Rui Zhang10State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710119, ChinaState Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710119, ChinaState Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710119, ChinaState Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710119, ChinaState Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710119, ChinaState Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710119, ChinaState Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710119, ChinaState Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710119, ChinaState Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710119, ChinaState Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710119, ChinaState Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710119, ChinaThe reliability of packaged laser diodes is heavily dependent on the quality of the die attach. Even a small void or delamination may result in a sudden increase in junction temperature, eventually leading to failure of the operation. The contact thermal resistance at the interface between the die attach and the heat sink plays a critical role in thermal management of high-power laser diode packages. This paper focuses on the investigation of interface contact thermal resistance of the die attach using thermal transient analysis. The structure function of the heat flow path in the T3ster thermal resistance testing experiment is utilized. By analyzing the structure function of the transient thermal characteristics, it was determined that interface thermal resistance between the chip and solder was 0.38 K/W, while the resistance between solder and heat sink was 0.36 K/W. The simulation and measurement results showed excellent agreement, indicating that it is possible to accurately predict the interface contact area of the die attach in the F-mount packaged single emitter laser diode. Additionally, the proportion of interface contact thermal resistance in the total package thermal resistance can be used to evaluate the quality of the die attach.https://www.mdpi.com/2079-9292/13/1/203die attachinterface contact thermal resistancethermal managementtransient thermal analysisstructure functionhigh-power laser diode |
| spellingShingle | Liting Deng Te Li Zhenfu Wang Pu Zhang Shunhua Wu Jiachen Liu Junyue Zhang Lang Chen Jiachen Zhang Weizhou Huang Rui Zhang Interface Contact Thermal Resistance of Die Attach in High-Power Laser Diode Packages Electronics die attach interface contact thermal resistance thermal management transient thermal analysis structure function high-power laser diode |
| title | Interface Contact Thermal Resistance of Die Attach in High-Power Laser Diode Packages |
| title_full | Interface Contact Thermal Resistance of Die Attach in High-Power Laser Diode Packages |
| title_fullStr | Interface Contact Thermal Resistance of Die Attach in High-Power Laser Diode Packages |
| title_full_unstemmed | Interface Contact Thermal Resistance of Die Attach in High-Power Laser Diode Packages |
| title_short | Interface Contact Thermal Resistance of Die Attach in High-Power Laser Diode Packages |
| title_sort | interface contact thermal resistance of die attach in high power laser diode packages |
| topic | die attach interface contact thermal resistance thermal management transient thermal analysis structure function high-power laser diode |
| url | https://www.mdpi.com/2079-9292/13/1/203 |
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