P-type conductive Ga2O3 epilayers grown on sapphire substrate by phosphorus-ion implantation technology
This study utilized various phosphorus-ion implantation techniques, incorporating low, medium, and high doses, to investigate the electrical properties of unintentionally doped β-Ga2O3 epilayers. These epilayers were grown on sapphire substrates by metalorganic chemical vapor deposition.Specifically...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-12-01
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| Series: | Materials Today Advances |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590049823000966 |