Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate
Heterogeneous integration of materials pave a new way for the development of the microsystem with miniaturization and complex functionalities. Two types of hybrid silicon on insulator (SOI) structures, i.e., Si (100)-on-Si (111) and Si (111)-on-Si (100), were prepared by the smart-cut technique, whi...
Main Authors: | , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2018-05-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5030776 |