Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate

Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate

Heterogeneous integration of materials pave a new way for the development of the microsystem with miniaturization and complex functionalities. Two types of hybrid silicon on insulator (SOI) structures, i.e., Si (100)-on-Si (111) and Si (111)-on-Si (100), were prepared by the smart-cut technique, whi...

Full description

Bibliographic Details
Main Authors:	Runchun Zhang, Beiji Zhao, Kai Huang, Tiangui You, Qi Jia, Jiajie Lin, Shibin Zhang, Youquan Yan, Ailun Yi, Min Zhou, Xin Ou
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2018-05-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5030776

Similar Items

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration
by: Lung-Hsing Hsu, et al.
Published: (2021-09-01)

PA-MBE GaN-Based Optoelectronics on Silicon Substrates
by: Chuah , Lee Siang
Published: (2009)

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
by: Wojciech Wojtasiak, et al.
Published: (2018-10-01)

Reliability of GaN high electron mobility transistors on silicon substrates
by: Demirtas, Sefa
Published: (2010)

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
by: Tao Lin, et al.
Published: (2018-08-01)

High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate
by: Jialiang Sun, et al.
Published: (2024-03-01)

GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate
by: Chang-Ju Lee, et al.
Published: (2019-03-01)

A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
by: Hussein, Asaad Shakir
Published: (2011)

Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding
by: Shi Zhou, et al.
Published: (2023-01-01)

Enhancement Of Efficiency Of GaN-On-GaN Led By Wet Etching Roughening On N-Face GaN Substrate
by: Alias, Ezzah A., et al.
Published: (2020)

Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices
by: Tadao Hashimoto, et al.
Published: (2022-08-01)

GaN-on-Silicon integration technology
by: Ng, Geok Ing, et al.
Published: (2013)

Properties of Strain in GaN Layer Grown on Si (100) Substrate and Its Porous Structure
by: Waheeda, S. N., et al.
Published: (2015)

Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs
by: Chunyan Song, et al.
Published: (2019-06-01)

Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)
by: Lau, Sien Hui
Published: (2020)

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
by: You-Chen Weng, et al.
Published: (2023-04-01)

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate
by: Peng Wu, et al.
Published: (2022-01-01)

V-shaped dislocations in a GaN epitaxial layer on GaN substrate
by: Atsushi Tanaka, et al.
Published: (2019-09-01)

Enhancement Of Efficiency Of GaN-on-GaN LED By Wet Etching Roughening On N-Face Gan Substrate
by: Alias, Ezzah A., et al.
Published: (2020)

Growth of (101¯1 ) semipolar GaN-based light-emitting diode structures on silicon-on-insulator
by: Wannous, Beatrice, et al.
Published: (2023)

The Structural and Optical Investigation of Grown GaN Film on Porous Silicon Substrate Prepared by PLD
by: Haneen Jabar, et al.
Published: (2023-02-01)

Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator
by: Taib, M. lkram Md, et al.
Published: (2015)

GaN nucleation on patterned sapphire substrate with different shapes for improved GaN overgrowth
by: Md. Taib, M. Ikram, et al.
Published: (2022)

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms
by: Magdalena A. Zając, et al.
Published: (2023-05-01)

Enhanced Responsivity of GaN Metal–Semiconductor–Metal (MSM) Photodetectors on GaN Substrate
by: Siyi Chang, et al.
Published: (2017-01-01)

Deep-level traps in lightly Si-doped n-GaN on free-standing m-oriented GaN substrates
by: H. Yamada, et al.
Published: (2018-04-01)

High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: toward micro light-emitting diodes
by: Baril, Kilian, et al.
Published: (2023)

GaN-Based LEDs Grown on Graphene-Covered SiO<sub>2</sub>/Si (100) Substrate
by: Wurui Song, et al.
Published: (2020-09-01)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
by: Kyaw, Zabu, et al.
Published: (2014)

AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate
by: Indraneel Sanyal, et al.
Published: (2021-01-01)

Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs
by: Masoud Sabaghi
Published: (2019-12-01)

Substrate Bias Stress Induced Kink Effect in GaN-on-Silicon High-Electron-Mobility Transistor
by: Ramdas P. Khade, et al.
Published: (2023-01-01)

High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate
by: Qiang Zhao, et al.
Published: (2019-08-01)

Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates
by: Bing Ren, et al.
Published: (2019-07-01)

Critical thickness of GaN film in controllable stress-induced self-separation for preparing native GaN substrates
by: Mengda Li, et al.
Published: (2019-10-01)

Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator
by: Bera, L. K., et al.
Published: (2014)

Carbon and Manganese in Semi-Insulating Bulk GaN Crystals
by: Mikolaj Amilusik, et al.
Published: (2022-03-01)

Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)
by: Ho Xin Jing, et al.
Published: (2019-03-01)

Damage to epitaxial GaN layers by silicon implantation
by: Tan, H, et al.
Published: (1996)

Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga<sub>2</sub>O<sub>3</sub>/Si Schottky Barrier Diodes
by: Zhenyu Qu, et al.
Published: (2023-01-01)