Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate

Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate

In this work, sub-micron-thick AlN/GaN transistors (HEMTs) grown on a silicon substrate for high-frequency power applications are reported. Using molecular beam epitaxy, an innovative ultrathin step-graded buffer with a total stack thickness of 450 nm enables one to combine an excellent electron con...

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Bibliographic Details
Main Authors: Elodie Carneiro, Stéphanie Rennesson, Sebastian Tamariz, Kathia Harrouche, Fabrice Semond, Farid Medjdoub
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Electronics
Subjects:
load pull
GaN-on-Si
MBE
PAE
P<sub>OUT</sub>
HEMT
Online Access:https://www.mdpi.com/2079-9292/12/13/2974

Internet

https://www.mdpi.com/2079-9292/12/13/2974

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