Characterization of thin-film adhesion and phonon lifetimes in Al/Si membranes by picosecond ultrasonics

We quantitatively study interfacial adhesion in a two-layer membrane system consisting of Al and Si with femtosecond time-resolved laser spectroscopy. High-frequency acoustic pulses in the sub-THz regime are utilized to characterize the membrane system. In order to explain the distinct features of t...

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Bibliographic Details
Main Authors: Martin Grossmann, Martin Schubert, Chuan He, Delia Brick, Elke Scheer, Mike Hettich, Vitalyi Gusev, Thomas Dekorsy
Format: Article
Language:English
Published: IOP Publishing 2017-01-01
Series:New Journal of Physics
Subjects:
Online Access:https://doi.org/10.1088/1367-2630/aa6d05
Description
Summary:We quantitatively study interfacial adhesion in a two-layer membrane system consisting of Al and Si with femtosecond time-resolved laser spectroscopy. High-frequency acoustic pulses in the sub-THz regime are utilized to characterize the membrane system. In order to explain the distinct features of the measured data, a spring model for the Al/Si interface is employed. We show that acoustic dissipation in this system needs to be included for accurate modeling of the interface adhesion over a broad frequency range. This modeling approach yields a spring constant of ${\eta }_{\mathrm{Al}-\mathrm{Si}}=17$ $\mathrm{kg}\,{\mathrm{nm}}^{-2}\,{{\rm{s}}}^{-2}$ , an acoustic phonon lifetime of ${\tau }_{\mathrm{Al}}=68$ ps at 240 GHz in polycrystalline Al and a frequency dependence of the lifetime in Si $\propto \,{\omega }^{-1}$ in the frequency range from 50–800 GHz.
ISSN:1367-2630