Characterization of thin-film adhesion and phonon lifetimes in Al/Si membranes by picosecond ultrasonics
We quantitatively study interfacial adhesion in a two-layer membrane system consisting of Al and Si with femtosecond time-resolved laser spectroscopy. High-frequency acoustic pulses in the sub-THz regime are utilized to characterize the membrane system. In order to explain the distinct features of t...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2017-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/aa6d05 |
| _version_ | 1827873544086749184 |
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| author | Martin Grossmann Martin Schubert Chuan He Delia Brick Elke Scheer Mike Hettich Vitalyi Gusev Thomas Dekorsy |
| author_facet | Martin Grossmann Martin Schubert Chuan He Delia Brick Elke Scheer Mike Hettich Vitalyi Gusev Thomas Dekorsy |
| author_sort | Martin Grossmann |
| collection | DOAJ |
| description | We quantitatively study interfacial adhesion in a two-layer membrane system consisting of Al and Si with femtosecond time-resolved laser spectroscopy. High-frequency acoustic pulses in the sub-THz regime are utilized to characterize the membrane system. In order to explain the distinct features of the measured data, a spring model for the Al/Si interface is employed. We show that acoustic dissipation in this system needs to be included for accurate modeling of the interface adhesion over a broad frequency range. This modeling approach yields a spring constant of ${\eta }_{\mathrm{Al}-\mathrm{Si}}=17$ $\mathrm{kg}\,{\mathrm{nm}}^{-2}\,{{\rm{s}}}^{-2}$ , an acoustic phonon lifetime of ${\tau }_{\mathrm{Al}}=68$ ps at 240 GHz in polycrystalline Al and a frequency dependence of the lifetime in Si $\propto \,{\omega }^{-1}$ in the frequency range from 50–800 GHz. |
| first_indexed | 2024-03-12T16:38:38Z |
| format | Article |
| id | doaj.art-88e49b5db83b4b1b89120aa8d0a1e656 |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:38:38Z |
| publishDate | 2017-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-88e49b5db83b4b1b89120aa8d0a1e6562023-08-08T14:37:20ZengIOP PublishingNew Journal of Physics1367-26302017-01-0119505301910.1088/1367-2630/aa6d05Characterization of thin-film adhesion and phonon lifetimes in Al/Si membranes by picosecond ultrasonicsMartin Grossmann0Martin Schubert1Chuan He2Delia Brick3Elke Scheer4Mike Hettich5Vitalyi Gusev6Thomas Dekorsy7Department of Physics, University of Konstanz , GermanyDepartment of Physics, University of Konstanz , GermanyDepartment of Physics, University of Konstanz , GermanyDepartment of Physics, University of Konstanz , GermanyDepartment of Physics, University of Konstanz , GermanyDepartment of Physics, University of Konstanz , GermanyLAUM, UMR-CNRS 6613, Universit du Maine , Av. O. Messiaen, F-72085 Le Mans, FranceDepartment of Physics, University of Konstanz , Germany; Institute for Technical Physics, German Aerospace Center , Pfaffenwaldring 38-40, D-70569 Stuttgart, GermanyWe quantitatively study interfacial adhesion in a two-layer membrane system consisting of Al and Si with femtosecond time-resolved laser spectroscopy. High-frequency acoustic pulses in the sub-THz regime are utilized to characterize the membrane system. In order to explain the distinct features of the measured data, a spring model for the Al/Si interface is employed. We show that acoustic dissipation in this system needs to be included for accurate modeling of the interface adhesion over a broad frequency range. This modeling approach yields a spring constant of ${\eta }_{\mathrm{Al}-\mathrm{Si}}=17$ $\mathrm{kg}\,{\mathrm{nm}}^{-2}\,{{\rm{s}}}^{-2}$ , an acoustic phonon lifetime of ${\tau }_{\mathrm{Al}}=68$ ps at 240 GHz in polycrystalline Al and a frequency dependence of the lifetime in Si $\propto \,{\omega }^{-1}$ in the frequency range from 50–800 GHz.https://doi.org/10.1088/1367-2630/aa6d05interface adhesiontime domain spectroscopyphononsnon-destructive testingintrinsic damping |
| spellingShingle | Martin Grossmann Martin Schubert Chuan He Delia Brick Elke Scheer Mike Hettich Vitalyi Gusev Thomas Dekorsy Characterization of thin-film adhesion and phonon lifetimes in Al/Si membranes by picosecond ultrasonics New Journal of Physics interface adhesion time domain spectroscopy phonons non-destructive testing intrinsic damping |
| title | Characterization of thin-film adhesion and phonon lifetimes in Al/Si membranes by picosecond ultrasonics |
| title_full | Characterization of thin-film adhesion and phonon lifetimes in Al/Si membranes by picosecond ultrasonics |
| title_fullStr | Characterization of thin-film adhesion and phonon lifetimes in Al/Si membranes by picosecond ultrasonics |
| title_full_unstemmed | Characterization of thin-film adhesion and phonon lifetimes in Al/Si membranes by picosecond ultrasonics |
| title_short | Characterization of thin-film adhesion and phonon lifetimes in Al/Si membranes by picosecond ultrasonics |
| title_sort | characterization of thin film adhesion and phonon lifetimes in al si membranes by picosecond ultrasonics |
| topic | interface adhesion time domain spectroscopy phonons non-destructive testing intrinsic damping |
| url | https://doi.org/10.1088/1367-2630/aa6d05 |
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