Numerical Simulation of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystal Growth by Czochralski Method with an Insulation Lid

Numerical Simulation of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystal Growth by Czochralski Method with an Insulation Lid

The effect of an insulation lid on the growth of 4-inch β-Ga<sub>2</sub>O<sub>3</sub> single crystals by the Czochralski method is analyzed by numerical simulation. The insulation lid mainly hinders upward radiant heat transfer from the melt and crucible and increases the axi...

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Bibliographic Details
Main Authors: Dan Wu, Ning Xia, Keke Ma, Jiabin Wang, Cheng Li, Zhu Jin, Hui Zhang, Deren Yang
Format: Article
Language:English
Published: MDPI AG 2022-11-01
Series:Crystals
Subjects:
β-Ga<sub>2</sub>O<sub>3</sub>
insulation lid
numerical simulation
Czochralski method
melt/crystal interface
Online Access:https://www.mdpi.com/2073-4352/12/12/1715

Internet

https://www.mdpi.com/2073-4352/12/12/1715

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