Numerical Simulation of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystal Growth by Czochralski Method with an Insulation Lid
The effect of an insulation lid on the growth of 4-inch β-Ga<sub>2</sub>O<sub>3</sub> single crystals by the Czochralski method is analyzed by numerical simulation. The insulation lid mainly hinders upward radiant heat transfer from the melt and crucible and increases the axi...
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| Format: | Article |
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MDPI AG
2022-11-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/12/1715 |
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| author | Dan Wu Ning Xia Keke Ma Jiabin Wang Cheng Li Zhu Jin Hui Zhang Deren Yang |
| author_facet | Dan Wu Ning Xia Keke Ma Jiabin Wang Cheng Li Zhu Jin Hui Zhang Deren Yang |
| author_sort | Dan Wu |
| collection | DOAJ |
| description | The effect of an insulation lid on the growth of 4-inch β-Ga<sub>2</sub>O<sub>3</sub> single crystals by the Czochralski method is analyzed by numerical simulation. The insulation lid mainly hinders upward radiant heat transfer from the melt and crucible and increases the axial temperature gradient in the crystal. Such benefits make the melt/crystal interface convex, which is conducive to suppressing spiral growth and growing large crystals with high quality. Materials with low thermal conductivity <i>λ</i> and low emissivity <i>ε</i> are the optimal choices for making an insulation lid. The inner hole has a great influence on the isolation of radiant heat, and it is determined that the maximum size of the inner diameter <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>D</mi><mrow><mi>i</mi><mi>n</mi></mrow></msub></mrow></semantics></math></inline-formula> should not be larger than 130 mm. Thermal stress analysis results indicated that the insulation lid will cause a better stress distribution, illustrating the effect of the insulation lid on the quality of a cylindrical crystal. |
| first_indexed | 2024-03-09T17:10:25Z |
| format | Article |
| id | doaj.art-891732e379a642dbbbd020a192a52c2a |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T17:10:25Z |
| publishDate | 2022-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-891732e379a642dbbbd020a192a52c2a2023-11-24T14:09:43ZengMDPI AGCrystals2073-43522022-11-011212171510.3390/cryst12121715Numerical Simulation of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystal Growth by Czochralski Method with an Insulation LidDan Wu0Ning Xia1Keke Ma2Jiabin Wang3Cheng Li4Zhu Jin5Hui Zhang6Deren Yang7State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaZhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, ChinaZhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, ChinaZhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, ChinaState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaThe effect of an insulation lid on the growth of 4-inch β-Ga<sub>2</sub>O<sub>3</sub> single crystals by the Czochralski method is analyzed by numerical simulation. The insulation lid mainly hinders upward radiant heat transfer from the melt and crucible and increases the axial temperature gradient in the crystal. Such benefits make the melt/crystal interface convex, which is conducive to suppressing spiral growth and growing large crystals with high quality. Materials with low thermal conductivity <i>λ</i> and low emissivity <i>ε</i> are the optimal choices for making an insulation lid. The inner hole has a great influence on the isolation of radiant heat, and it is determined that the maximum size of the inner diameter <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>D</mi><mrow><mi>i</mi><mi>n</mi></mrow></msub></mrow></semantics></math></inline-formula> should not be larger than 130 mm. Thermal stress analysis results indicated that the insulation lid will cause a better stress distribution, illustrating the effect of the insulation lid on the quality of a cylindrical crystal.https://www.mdpi.com/2073-4352/12/12/1715β-Ga<sub>2</sub>O<sub>3</sub>insulation lidnumerical simulationCzochralski methodmelt/crystal interface |
| spellingShingle | Dan Wu Ning Xia Keke Ma Jiabin Wang Cheng Li Zhu Jin Hui Zhang Deren Yang Numerical Simulation of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystal Growth by Czochralski Method with an Insulation Lid Crystals β-Ga<sub>2</sub>O<sub>3</sub> insulation lid numerical simulation Czochralski method melt/crystal interface |
| title | Numerical Simulation of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystal Growth by Czochralski Method with an Insulation Lid |
| title_full | Numerical Simulation of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystal Growth by Czochralski Method with an Insulation Lid |
| title_fullStr | Numerical Simulation of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystal Growth by Czochralski Method with an Insulation Lid |
| title_full_unstemmed | Numerical Simulation of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystal Growth by Czochralski Method with an Insulation Lid |
| title_short | Numerical Simulation of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystal Growth by Czochralski Method with an Insulation Lid |
| title_sort | numerical simulation of β ga sub 2 sub o sub 3 sub single crystal growth by czochralski method with an insulation lid |
| topic | β-Ga<sub>2</sub>O<sub>3</sub> insulation lid numerical simulation Czochralski method melt/crystal interface |
| url | https://www.mdpi.com/2073-4352/12/12/1715 |
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