Low-Temperature Annealing of CdZnTeSe under Bias
We performed a gradual low-temperature annealing up to 360 K on a CdZnTeSe radiation detector equipped with gold and indium electrodes under bias at both polarities. We observed significant changes in the detector’s resistance and space-charge accumulation. This could potentially lead to the control...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-12-01
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Series: | Sensors |
Subjects: | |
Online Access: | https://www.mdpi.com/1424-8220/22/1/171 |