Low-Temperature Annealing of CdZnTeSe under Bias

We performed a gradual low-temperature annealing up to 360 K on a CdZnTeSe radiation detector equipped with gold and indium electrodes under bias at both polarities. We observed significant changes in the detector’s resistance and space-charge accumulation. This could potentially lead to the control...

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Bibliographic Details
Main Authors: Martin Rejhon, Vaclav Dedic, Roman Grill, Jan Franc, Utpal N. Roy, Ralph B. James
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Sensors
Subjects:
Online Access:https://www.mdpi.com/1424-8220/22/1/171