Analysis, Design, and Experimental Results for a High-Frequency ZVZCS Galvanically Isolated PSFB DC-DC Converter over a Wide Operating Range Using GaN-HEMT
This paper investigates the potential of the emerging gallium nitride (GaN) high-electron mobility transistors (HEMT) power devices to meet certain power conversion challenges. The advantages of utilizing GaN HEMT transistors in a high-frequency, high-power isolated DC-DC topology are explored exper...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-11-01
|
| Series: | World Electric Vehicle Journal |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2032-6653/13/11/206 |