Review on Modeling and Mitigation of Bipolar Degradation in 4H-SiC
It is now 25 years since the first observation of recombination-enhanced dislocation glide (REDG) in SiC p-i-n diodes. Since then, great progress has been made in understanding the mechanism behind up to a point where models emerged that can predict the current density threshold for the onset of RED...
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| Format: | Article |
| Language: | English |
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Elsevier
2024-04-01
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| Series: | Power Electronic Devices and Components |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370424000075 |