Soft-Error-Aware Radiation-Hardened Ge-DLTFET-Based SRAM Cell Design

Soft-Error-Aware Radiation-Hardened Ge-DLTFET-Based SRAM Cell Design

In this paper, a soft-error-aware radiation-hardened 6T SRAM cell has been implemented using germanium-based dopingless tunnel FET (Ge DLTFET). In a circuit level simulation, the device-circuit co-design approach is used. Semiconductor devices are very prone to the radiation environment; hence, find...

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Bibliographic Details
Main Authors: Pushpa Raikwal, Prashant Kumar, Meena Panchore, Pushpendra Dwivedi, Kanchan Cecil
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Electronics
Subjects:
germanium based dopingless tunnel FET (Ge-DLTFET)
radiation-hardening-by-design (RHBD) technique
SRAM cell
single event upset (SEU)
Online Access:https://www.mdpi.com/2079-9292/12/14/3198

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https://www.mdpi.com/2079-9292/12/14/3198

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