Effect of Annealing Atmosphere on the Diode Behaviour of ZnO/Si Heterojunction

Effect of Annealing Atmosphere on the Diode Behaviour of ZnO/Si Heterojunction

The effect of thermal annealing atmosphere on the electrical characteristics of Zinc oxide (ZnO) nanorods/p-Silicon (Si) diodes is investigated. ZnO nanorods are grown by low-temperature aqueous solution growth method and annealed in Nitrogen and Oxygen atmosphere. As-grown and annealed nanorods are...

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Bibliographic Details
Main Authors: Sadia Muniza Faraz, Syed Riaz un Nabi Jafri, Zarreen Tajvar, Naveed ul Hassan Alvi, Qamar-ul Wahab, Omer Nur
Format: Article
Language:English
Published: Kaunas University of Technology 2021-08-01
Series:Elektronika ir Elektrotechnika
Subjects:
zno annealing
heterojunction
series resistance
zno nanorods
Online Access:https://eejournal.ktu.lt/index.php/elt/article/view/28723

Internet

https://eejournal.ktu.lt/index.php/elt/article/view/28723

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