Epitaxial synthesis of graphene on 4H-SiC by microwave plasma chemical vapor deposition

Epitaxial synthesis of graphene on 4H-SiC by microwave plasma chemical vapor deposition

Epitaxial graphene (EG) on semi-insulating SiC prepared by a thermal decomposition method is the most promising strategy for graphene application in large-scale integrated circuits due to compatibility with current semiconductor processes. In this study, high-quality few-layer graphene (FLG) was epi...

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Bibliographic Details
Main Authors: Xuemin Zhang, Changling Yan, Chunhong Zeng, Tianyu Sun, Zheng Xing, Wenhua Shi, Yiqun Wang, Chao Pang, Baoshun Zhang
Format: Article
Language:English
Published: IOP Publishing 2020-01-01
Series:Materials Research Express
Subjects:
graphene
epitaxial growth
MPCVD
4H-SiC
Hall mobility
Online Access:https://doi.org/10.1088/2053-1591/abcb3a

Internet

https://doi.org/10.1088/2053-1591/abcb3a

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