High Current Density Vertical Nanowire TFETs With I₆₀ > 1 <italic>μ</italic>A/<italic>μ</italic>m
We present experimental data for a vertical, 22-nm-diameter InAs/(In)GaAsSb nanowire Tunnel Field-Effect Transistor that exhibits the highest reported I60 of <inline-formula> <tex-math notation="LaTeX">$1.2~\mu \text{A}/\mu \text{m}$ </tex-math></inline-formula>, pa...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10234407/ |