High Current Density Vertical Nanowire TFETs With I₆₀ > 1 <italic>μ</italic>A/<italic>μ</italic>m
We present experimental data for a vertical, 22-nm-diameter InAs/(In)GaAsSb nanowire Tunnel Field-Effect Transistor that exhibits the highest reported I60 of <inline-formula> <tex-math notation="LaTeX">$1.2~\mu \text{A}/\mu \text{m}$ </tex-math></inline-formula>, pa...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10234407/ |
| Summary: | We present experimental data for a vertical, 22-nm-diameter InAs/(In)GaAsSb nanowire Tunnel Field-Effect Transistor that exhibits the highest reported I60 of <inline-formula> <tex-math notation="LaTeX">$1.2~\mu \text{A}/\mu \text{m}$ </tex-math></inline-formula>, paving the way for low power applications. The transistor reaches a minimum subthreshold swing of 43 mV/dec at <inline-formula> <tex-math notation="LaTeX">$\text{V}_{DS}$ </tex-math></inline-formula> = 300 mV with a sub-60 mV/dec operation over a wide current range. Combined with a high transconductance of <inline-formula> <tex-math notation="LaTeX">$205~\mu \text{S}/\mu \text{m}$ </tex-math></inline-formula>, the ON-current for the same device is <inline-formula> <tex-math notation="LaTeX">$18.6~\mu \text{A}/\mu \text{m}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">$\text{V}_{DS}$ </tex-math></inline-formula> = 300 mV for <inline-formula> <tex-math notation="LaTeX">$\text{I}_{OFF}$ </tex-math></inline-formula> of 1 nA/<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>. |
|---|---|
| ISSN: | 2169-3536 |