High Current Density Vertical Nanowire TFETs With I₆₀ > 1 <italic>μ</italic>A/<italic>μ</italic>m
We present experimental data for a vertical, 22-nm-diameter InAs/(In)GaAsSb nanowire Tunnel Field-Effect Transistor that exhibits the highest reported I60 of <inline-formula> <tex-math notation="LaTeX">$1.2~\mu \text{A}/\mu \text{m}$ </tex-math></inline-formula>, pa...
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IEEE
2023-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/10234407/ |
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| author | Gautham Rangasamy Zhongyunshen Zhu Lars-Erik Wernersson |
| author_facet | Gautham Rangasamy Zhongyunshen Zhu Lars-Erik Wernersson |
| author_sort | Gautham Rangasamy |
| collection | DOAJ |
| description | We present experimental data for a vertical, 22-nm-diameter InAs/(In)GaAsSb nanowire Tunnel Field-Effect Transistor that exhibits the highest reported I60 of <inline-formula> <tex-math notation="LaTeX">$1.2~\mu \text{A}/\mu \text{m}$ </tex-math></inline-formula>, paving the way for low power applications. The transistor reaches a minimum subthreshold swing of 43 mV/dec at <inline-formula> <tex-math notation="LaTeX">$\text{V}_{DS}$ </tex-math></inline-formula> = 300 mV with a sub-60 mV/dec operation over a wide current range. Combined with a high transconductance of <inline-formula> <tex-math notation="LaTeX">$205~\mu \text{S}/\mu \text{m}$ </tex-math></inline-formula>, the ON-current for the same device is <inline-formula> <tex-math notation="LaTeX">$18.6~\mu \text{A}/\mu \text{m}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">$\text{V}_{DS}$ </tex-math></inline-formula> = 300 mV for <inline-formula> <tex-math notation="LaTeX">$\text{I}_{OFF}$ </tex-math></inline-formula> of 1 nA/<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>. |
| first_indexed | 2024-03-12T01:32:22Z |
| format | Article |
| id | doaj.art-89fb3b23368246b29bd3d1a5388c62aa |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-03-12T01:32:22Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-89fb3b23368246b29bd3d1a5388c62aa2023-09-11T23:01:33ZengIEEEIEEE Access2169-35362023-01-0111956929569610.1109/ACCESS.2023.331025310234407High Current Density Vertical Nanowire TFETs With I₆₀ > 1 <italic>μ</italic>A/<italic>μ</italic>mGautham Rangasamy0https://orcid.org/0000-0003-0074-3210Zhongyunshen Zhu1https://orcid.org/0000-0002-7588-4088Lars-Erik Wernersson2https://orcid.org/0000-0002-1039-5849Department of Electrical and Information Technology, Lund University, Lund, SwedenDepartment of Electrical and Information Technology, Lund University, Lund, SwedenDepartment of Electrical and Information Technology, Lund University, Lund, SwedenWe present experimental data for a vertical, 22-nm-diameter InAs/(In)GaAsSb nanowire Tunnel Field-Effect Transistor that exhibits the highest reported I60 of <inline-formula> <tex-math notation="LaTeX">$1.2~\mu \text{A}/\mu \text{m}$ </tex-math></inline-formula>, paving the way for low power applications. The transistor reaches a minimum subthreshold swing of 43 mV/dec at <inline-formula> <tex-math notation="LaTeX">$\text{V}_{DS}$ </tex-math></inline-formula> = 300 mV with a sub-60 mV/dec operation over a wide current range. Combined with a high transconductance of <inline-formula> <tex-math notation="LaTeX">$205~\mu \text{S}/\mu \text{m}$ </tex-math></inline-formula>, the ON-current for the same device is <inline-formula> <tex-math notation="LaTeX">$18.6~\mu \text{A}/\mu \text{m}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">$\text{V}_{DS}$ </tex-math></inline-formula> = 300 mV for <inline-formula> <tex-math notation="LaTeX">$\text{I}_{OFF}$ </tex-math></inline-formula> of 1 nA/<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>.https://ieeexplore.ieee.org/document/10234407/Vertical nanowiresIII-VTFETssteep-slopesource engineering |
| spellingShingle | Gautham Rangasamy Zhongyunshen Zhu Lars-Erik Wernersson High Current Density Vertical Nanowire TFETs With I₆₀ > 1 <italic>μ</italic>A/<italic>μ</italic>m IEEE Access Vertical nanowires III-V TFETs steep-slope source engineering |
| title | High Current Density Vertical Nanowire TFETs With I₆₀ > 1 <italic>μ</italic>A/<italic>μ</italic>m |
| title_full | High Current Density Vertical Nanowire TFETs With I₆₀ > 1 <italic>μ</italic>A/<italic>μ</italic>m |
| title_fullStr | High Current Density Vertical Nanowire TFETs With I₆₀ > 1 <italic>μ</italic>A/<italic>μ</italic>m |
| title_full_unstemmed | High Current Density Vertical Nanowire TFETs With I₆₀ > 1 <italic>μ</italic>A/<italic>μ</italic>m |
| title_short | High Current Density Vertical Nanowire TFETs With I₆₀ > 1 <italic>μ</italic>A/<italic>μ</italic>m |
| title_sort | high current density vertical nanowire tfets with i x2086 x2080 x003e 1 italic x03bc italic a italic x03bc italic m |
| topic | Vertical nanowires III-V TFETs steep-slope source engineering |
| url | https://ieeexplore.ieee.org/document/10234407/ |
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