High Current Density Vertical Nanowire TFETs With I₆₀ > 1 <italic>μ</italic>A/<italic>μ</italic>m

High Current Density Vertical Nanowire TFETs With I₆₀ > 1 <italic>μ</italic>A/<italic>μ</italic>m

We present experimental data for a vertical, 22-nm-diameter InAs/(In)GaAsSb nanowire Tunnel Field-Effect Transistor that exhibits the highest reported I60 of <inline-formula> <tex-math notation="LaTeX">$1.2~\mu \text{A}/\mu \text{m}$ </tex-math></inline-formula>, pa...

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Bibliographic Details
Main Authors:	Gautham Rangasamy, Zhongyunshen Zhu, Lars-Erik Wernersson
Format:	Article
Language:	English
Published:	IEEE 2023-01-01
Series:	IEEE Access
Subjects:	Vertical nanowires III-V TFETs steep-slope source engineering
Online Access:	https://ieeexplore.ieee.org/document/10234407/

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