Modeling Femtosecond Reduction of Atomic Scattering Factors in X-ray-Excited Silicon with Boltzmann Kinetic Equations

In this communication, we describe the application of Boltzmann kinetic equations for modeling massive electronic excitation in a silicon nanocrystal film after its irradiation with intense femtosecond hard X-ray pulses. This analysis was inspired by an experiment recently performed at the X-ray fre...

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Bibliographic Details
Main Authors: Beata Ziaja, Michal Stransky, Konrad J. Kapcia, Ichiro Inoue
Format: Article
Language:English
Published: MDPI AG 2023-12-01
Series:Atoms
Subjects:
Online Access:https://www.mdpi.com/2218-2004/11/12/154