Enhancement of InN Luminescence by Introduction of Graphene Interlayer

Enhancement of InN Luminescence by Introduction of Graphene Interlayer

Indium nitride (InN) luminescence is substantially enhanced by the introduction of a multilayer graphene interlayer, mitigating the lattice mismatch between the InN epilayer and the Gallium nitride (GaN) template on a sapphire substrate via weak van der Waals interaction between graphene and nitride...

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Bibliographic Details
Main Authors: Darius Dobrovolskas, Shingo Arakawa, Shinichiro Mouri, Tsutomu Araki, Yasushi Nanishi, Jūras Mickevičius, Gintautas Tamulaitis
Format: Article
Language:English
Published: MDPI AG 2019-03-01
Series:Nanomaterials
Subjects:
graphene
indium nitride
molecular beam epitaxy
photoluminescence
Online Access:http://www.mdpi.com/2079-4991/9/3/417

Internet

http://www.mdpi.com/2079-4991/9/3/417

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