Enhancement of InN Luminescence by Introduction of Graphene Interlayer
Indium nitride (InN) luminescence is substantially enhanced by the introduction of a multilayer graphene interlayer, mitigating the lattice mismatch between the InN epilayer and the Gallium nitride (GaN) template on a sapphire substrate via weak van der Waals interaction between graphene and nitride...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-03-01
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| Series: | Nanomaterials |
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| Online Access: | http://www.mdpi.com/2079-4991/9/3/417 |
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| author | Darius Dobrovolskas Shingo Arakawa Shinichiro Mouri Tsutomu Araki Yasushi Nanishi Jūras Mickevičius Gintautas Tamulaitis |
| author_facet | Darius Dobrovolskas Shingo Arakawa Shinichiro Mouri Tsutomu Araki Yasushi Nanishi Jūras Mickevičius Gintautas Tamulaitis |
| author_sort | Darius Dobrovolskas |
| collection | DOAJ |
| description | Indium nitride (InN) luminescence is substantially enhanced by the introduction of a multilayer graphene interlayer, mitigating the lattice mismatch between the InN epilayer and the Gallium nitride (GaN) template on a sapphire substrate via weak van der Waals interaction between graphene and nitride layers. The InN epilayers are deposited by radio-frequency plasma-assisted molecular beam epitaxy (MBE), and are characterized by spatially-resolved photoluminescence spectroscopy using confocal microscopy. A small blue shift of the emission band from the band gap evidences a low density of equilibrium carriers, and a high quality of InN on multilayer graphene. A deposition temperature of ~375 °C is determined as optimal. The granularity, which is observed for the InN epilayers deposited on multilayer graphene, is shown to be eliminated, and the emission intensity is further enhanced by the introduction of an aluminum nitride (AlN) buffer layer between graphene and InN. |
| first_indexed | 2024-12-20T06:48:29Z |
| format | Article |
| id | doaj.art-8a01ee7a9ed64dfc86bc3b6b15f118a6 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-12-20T06:48:29Z |
| publishDate | 2019-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-8a01ee7a9ed64dfc86bc3b6b15f118a62022-12-21T19:49:39ZengMDPI AGNanomaterials2079-49912019-03-019341710.3390/nano9030417nano9030417Enhancement of InN Luminescence by Introduction of Graphene InterlayerDarius Dobrovolskas0Shingo Arakawa1Shinichiro Mouri2Tsutomu Araki3Yasushi Nanishi4Jūras Mickevičius5Gintautas Tamulaitis6Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio al. 3, LT-10257 Vilnius, LithuaniaDepartment of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, JapanDepartment of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, JapanDepartment of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, JapanDepartment of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, JapanInstitute of Photonics and Nanotechnology, Vilnius University, Sauletekio al. 3, LT-10257 Vilnius, LithuaniaInstitute of Photonics and Nanotechnology, Vilnius University, Sauletekio al. 3, LT-10257 Vilnius, LithuaniaIndium nitride (InN) luminescence is substantially enhanced by the introduction of a multilayer graphene interlayer, mitigating the lattice mismatch between the InN epilayer and the Gallium nitride (GaN) template on a sapphire substrate via weak van der Waals interaction between graphene and nitride layers. The InN epilayers are deposited by radio-frequency plasma-assisted molecular beam epitaxy (MBE), and are characterized by spatially-resolved photoluminescence spectroscopy using confocal microscopy. A small blue shift of the emission band from the band gap evidences a low density of equilibrium carriers, and a high quality of InN on multilayer graphene. A deposition temperature of ~375 °C is determined as optimal. The granularity, which is observed for the InN epilayers deposited on multilayer graphene, is shown to be eliminated, and the emission intensity is further enhanced by the introduction of an aluminum nitride (AlN) buffer layer between graphene and InN.http://www.mdpi.com/2079-4991/9/3/417grapheneindium nitridemolecular beam epitaxyphotoluminescence |
| spellingShingle | Darius Dobrovolskas Shingo Arakawa Shinichiro Mouri Tsutomu Araki Yasushi Nanishi Jūras Mickevičius Gintautas Tamulaitis Enhancement of InN Luminescence by Introduction of Graphene Interlayer Nanomaterials graphene indium nitride molecular beam epitaxy photoluminescence |
| title | Enhancement of InN Luminescence by Introduction of Graphene Interlayer |
| title_full | Enhancement of InN Luminescence by Introduction of Graphene Interlayer |
| title_fullStr | Enhancement of InN Luminescence by Introduction of Graphene Interlayer |
| title_full_unstemmed | Enhancement of InN Luminescence by Introduction of Graphene Interlayer |
| title_short | Enhancement of InN Luminescence by Introduction of Graphene Interlayer |
| title_sort | enhancement of inn luminescence by introduction of graphene interlayer |
| topic | graphene indium nitride molecular beam epitaxy photoluminescence |
| url | http://www.mdpi.com/2079-4991/9/3/417 |
| work_keys_str_mv | AT dariusdobrovolskas enhancementofinnluminescencebyintroductionofgrapheneinterlayer AT shingoarakawa enhancementofinnluminescencebyintroductionofgrapheneinterlayer AT shinichiromouri enhancementofinnluminescencebyintroductionofgrapheneinterlayer AT tsutomuaraki enhancementofinnluminescencebyintroductionofgrapheneinterlayer AT yasushinanishi enhancementofinnluminescencebyintroductionofgrapheneinterlayer AT jurasmickevicius enhancementofinnluminescencebyintroductionofgrapheneinterlayer AT gintautastamulaitis enhancementofinnluminescencebyintroductionofgrapheneinterlayer |